1653nm IR Laser Emitter Diode
Description
Technical Parameters
1653 nm ir laser emitter diode is infrared laser semiconductor device with central wavelength of 1653.7 nm and wavelength deviation kept within ±1 nm. This wavelength matches methane gas absorptionpeak, making it critical optical source for opticalabsorptionbased methanedetection instruments. Output wavelength drifts as operatingtemperature varies; systemside temperature compensation design should be considered for endproduct gasdetection stability.
Laser diodes for gasdetection require tight wavelength tolerance control. Our production inspection workflow includes wavelength testing for each unit, helping maintain wavelengthaccuracy for batchsupplied gassensing laser diodes.
Technical Parameters
|
Parameter |
Specification |
|
Material |
Infrared laser semiconductor chip |
|
Central Wavelength |
1653.7 nm |
|
Wavelength Error |
±1 nm |
|
Key Feature |
Matches methane gas absorptionpeak |
|
Thermal Characteristic |
Wavelength changes along with temperature fluctuation |
Applications
Optical methanedetection instrument core source
Infrared laser diode for gasabsorptionbased methanesensing equipment.
Industrialsite gasleak monitoring hardware
Wavelengthcalibrated laser source for fixedlocation methaneleak detectors.
Gassensing technicalresearch test fixtures
IR laser emitter diode for labscale gasdetection testjig development.
Customization
OEM / ODM services are available. We can produce following customer technical drawings or physical prototypes. Customsample development time is roughly oneweek. Samples for evaluation before massproduction can be supplied.
Packaging & Transportation
Every ir laser emitter diode is protected by antistatic packaging material, placed in shockproof foam box. Boxes are loaded to reinforced exportgrade corrugated cartons filled with cushioning filler, wrapped with waterproof stretchfilm, marked with antistatic and fragile warninglabels outside. EXW, FOB, DDP tradeterms are supported.
FAQ
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