Photodarlington Transistor

This model is ETT062-3BE1. It is an NPN silicon product. A photodarlington has two transistors inside. The gain is very high. A very small amount of light can trigger it. The product works for photoelectric switches and precision instruments. A precision instrument customer used our photodarlington. They needed to detect very weak light signals. A regular phototransistor was not sensitive enough. Our photodarlington has light current of 5 to 10mA. Dark current is only 10μA. The signal to noise ratio is high. The customer said detection distance doubled. The Photodarlington Transistor gives you high gain in one package.

Our factory is in Haiyan, Jiaxing, Zhejiang. It is 18,000 square meters. We have environment management certification (certificate 05325E31361ROS). We have a post doctoral workstation with 6 PhDs. We have applied for 18 patents. Our products are RoHS compliant. We follow 5S management. Each photodarlington is fully tested. We give 1 year warranty. If goods arrive damaged, send clear photos within 48 hours. We send free replacements. Our after sales team works 7x24 and gives a solution within 2 hours. The product is backed by real quality control.

Black epoxy package: This package blocks visible light. It only lets infrared light pass. So ambient light interference is very small. Peak wavelength is 850nm. Spectral range is 700 to 1000nm. Perfect match with 850nm infrared LEDs. High gain: Light current is 5 to 10mA. Dark current is only 10μA. So signal to noise ratio is high. A tiny amount of light triggers it. Saturation voltage: 1.5V. When the photodarlington turns on, the voltage between collector and emitter is 1.5V. You need to consider this in your circuit design. Voltage rating: VCEO is 30V. VECO is 4V. Do not reverse the connections. Power dissipation: 80mW. Maximum collector current is 40mA. Do not exceed these limits. View angle: ±36 degrees. Medium width. Good for most photoelectric switches. The product is easy to use.

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