China optoelectronic devices Manufacturers Factory Suppliers
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Photodarlington Transistor
This model is ETT062-3BE1. It is an NPN silicon product. A photodarlington has two transistors inside. The gain is very high. A very small amount of light can trigger it. The product works for...
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1653nm Laser Diode
Wavelength: center is 1653.7nm. This is the methane absorption peak. When you do detection, the wavelength must be aligned. Our wavelength error is within ±1nm. Wavelength changes with temperature...
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Red Light Emitting Diode
EE622-L3E1 is a Φ3mm clear epoxy package. Light intensity is 2500 to 3000mcd. That is very bright. View angle is 15 to 30 degrees. It can replace old 3mm red LEDs. Forward voltage is 1.9 to 2.3V....
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Linear Photodiode
ED602-MG3 is a TO-18 metal can package. Reverse voltage is 20V. Open circuit voltage is 0.42V. Short circuit current is 18 to 35μA. Dark current is 0.1μA at VR=5V. Junction capacitance is 50pF....
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Avalanche Photo Detector
Gain: When you add reverse bias to an APD, the photocurrent is amplified. Optimal gain M=100. That means output signal is 100 times the input light. Regular PIN has no gain. Responsivity: 45 to...
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Light Sensitive Transistor
ET102-BM2: TO-18 metal can. Peak wavelength 940nm. Good match with infrared LEDs. Photocurrent 6mA. Dark current 200nA. View angle 130 degrees. Very wide. Good for receiving light from a large...






