China optoelectronic devices Manufacturers Factory Suppliers

We need to keep charging ourselves to keep up with the pace of long-term development. In daily work and life, employees should choose the direction of their own development, and constantly learn the knowledge they should have in Red Light Emitting Diode, Photodarlington Transistor, Avalanche Photo Detector industry, enhance their business skills and improve their overall quality. Due to our rich experience and superb production technology, we firmly believe that our optoelectronic devices is very competitive in the market. Our products and services are designed to help businesses grow and succeed. Our company has earned a reputation for excellence in customer service and support. We take pride in offering products that are reliable and durable. Our products are designed with the end-user in mind, ensuring optimal functionality and usability. Our company is committed to providing competitive pricing for our products while maintaining high quality standards.
  • Photodarlington Transistor
    Photodarlington Transistor

    This model is ETT062-3BE1. It is an NPN silicon product. A photodarlington has two transistors inside. The gain is very high. A very small amount of light can trigger it. The product works for...

  • Darlington Photo Transistor
    Darlington Photo Transistor

    The darlington photo transistor (ETT0623BE1) is silicon NPN photodarlington component built with internal darlington twotransistor cascade architecture. This special internal structure brings very...

  • Optical Sensing Transistor
    Optical Sensing Transistor

    The phototransistor (ET102BM2) is TO18 metalcan packaged silicon NPN phototransistor with peak spectral response at 940 nm. It delivers 6 mA photocurrent, 200 nA darkcurrent and ultrawide...

  • Photo Receiving Transistor
    Photo Receiving Transistor

    The photo receiving transistor (ET102BM2) is TO18 metalcan packaged silicon phototransistor optimized for 940 nm infraredlight reception. It provides 6 mA typical photocurrent and 200 nA...

  • Photo Sensitive Bipolar Transistor
    Photo Sensitive Bipolar Transistor

    The photo sensitive bipolar transistor (model ET102BM2) is TO18 metalcan packaged NPNtype bipolar phototransistor. Its peakwavelength response centers at 940 nm, wellmatched with 940 nm...

  • High Sensitivity Avalanche Photodiode
    High Sensitivity Avalanche Photodiode

    The high sensitivity avalanche photodiode exploits avalanche carriermultiplication effect under matched reversebias voltage to realize highsensitivity weaklight signal reception. It achieves...

  • Avalanche Optical Detector Diode
    Avalanche Optical Detector Diode

    The avalanche optical detector diode is avalancheeffectbased highsensitivity optical receiving semiconductor device. Under appropriate reversebias voltage it generates internal carrier...

  • Linear Optical Receiving Diode
    Linear Optical Receiving Diode

    The linear optical receiving diode (ED602MG3) is a TO18 metalcan packaged photodiode for linearmode optical signal reception. Under VR=5 V reversebias condition it features dark current of 0.1 μA,...

  • Red Light Emitting Diode
    Red Light Emitting Diode

    The red light emitting diode (EE622L3E1) is a throughhole visiblered lightemitting semiconductor device. Its Φ3 mm clear epoxy package produces bright red luminous output of 25003000 mcd under...

  • Red Led Light Diode
    Red Led Light Diode

    The red led light diode (model EE622L3E1) is a Φ3mm clear epoxy packaged visiblered lightemitting semiconductor component. It delivers highbrightness light intensity ranging from 25003000 mcd with...

  • Red Light Emitting Diode
    Red Light Emitting Diode

    EE622-L3E1 is a Φ3mm clear epoxy package. Light intensity is 2500 to 3000mcd. That is very bright. View angle is 15 to 30 degrees. It can replace old 3mm red LEDs. Forward voltage is 1.9 to 2.3V....

  • Avalanche Photo Detector
    Avalanche Photo Detector

    Gain: When you add reverse bias to an APD, the photocurrent is amplified. Optimal gain M=100. That means output signal is 100 times the input light. Regular PIN has no gain. Responsivity: 45 to...

Harry Parker star star star star star
After years of technical precipitation, this supplier also has R&D teams in various fields. The R&D system and production control system are very standardized, and the products are very good.
Michelle Garcia star star star star star
We have cooperated with this supplier for many years, so we also know them very well. Their expert engineers solve process problems and optimize product structures. We also have a lot of repeat
Dusti Gonzalez star star star star star
This company constantly adjusts the product processing technology. Most of their products are processed by fully automatic production line equipment, so the product quality can be strictly guaranteed.
Frederick Swain star star star star star
The product is clear and works well, and it's worth the price.
Rose Chiodo star star star star star
The positive attitude of the employees of this company has left us with a great experience, and it's really nice to work with them.
Jimmy Armes star star star star star
We are very happy and satisfied with this cooperation!
We always adhere to the concept of quality development and lead the development of the industry by researching and producing 'high, precise and advanced' optoelectronic devices, 400G OSFP112 and QSFP-DD. As one of the most professional optoelectronic devices manufacturers and suppliers in China, we're featured by quality products and good price. Please rest assured to wholesale bulk premium optoelectronic devices made in China here from our factory. Also, quotation is available.