China optoelectronic devices Manufacturers Factory Suppliers
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Photodarlington Transistor
This model is ETT062-3BE1. It is an NPN silicon product. A photodarlington has two transistors inside. The gain is very high. A very small amount of light can trigger it. The product works for...
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Darlington Photo Transistor
The darlington photo transistor (ETT0623BE1) is silicon NPN photodarlington component built with internal darlington twotransistor cascade architecture. This special internal structure brings very...
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Optical Sensing Transistor
The phototransistor (ET102BM2) is TO18 metalcan packaged silicon NPN phototransistor with peak spectral response at 940 nm. It delivers 6 mA photocurrent, 200 nA darkcurrent and ultrawide...
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Photo Receiving Transistor
The photo receiving transistor (ET102BM2) is TO18 metalcan packaged silicon phototransistor optimized for 940 nm infraredlight reception. It provides 6 mA typical photocurrent and 200 nA...
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Photo Sensitive Bipolar Transistor
The photo sensitive bipolar transistor (model ET102BM2) is TO18 metalcan packaged NPNtype bipolar phototransistor. Its peakwavelength response centers at 940 nm, wellmatched with 940 nm...
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High Sensitivity Avalanche Photodiode
The high sensitivity avalanche photodiode exploits avalanche carriermultiplication effect under matched reversebias voltage to realize highsensitivity weaklight signal reception. It achieves...
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Avalanche Optical Detector Diode
The avalanche optical detector diode is avalancheeffectbased highsensitivity optical receiving semiconductor device. Under appropriate reversebias voltage it generates internal carrier...
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Linear Optical Receiving Diode
The linear optical receiving diode (ED602MG3) is a TO18 metalcan packaged photodiode for linearmode optical signal reception. Under VR=5 V reversebias condition it features dark current of 0.1 μA,...
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Red Light Emitting Diode
The red light emitting diode (EE622L3E1) is a throughhole visiblered lightemitting semiconductor device. Its Φ3 mm clear epoxy package produces bright red luminous output of 25003000 mcd under...
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Red Led Light Diode
The red led light diode (model EE622L3E1) is a Φ3mm clear epoxy packaged visiblered lightemitting semiconductor component. It delivers highbrightness light intensity ranging from 25003000 mcd with...
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Red Light Emitting Diode
EE622-L3E1 is a Φ3mm clear epoxy package. Light intensity is 2500 to 3000mcd. That is very bright. View angle is 15 to 30 degrees. It can replace old 3mm red LEDs. Forward voltage is 1.9 to 2.3V....
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Avalanche Photo Detector
Gain: When you add reverse bias to an APD, the photocurrent is amplified. Optimal gain M=100. That means output signal is 100 times the input light. Regular PIN has no gain. Responsivity: 45 to...












