Darlington Photo Transistor
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Darlington Photo Transistor

The darlington photo transistor (ETT0623BE1) is silicon NPN photodarlington component built with internal darlington twotransistor cascade architecture. This special internal structure brings very high current gain: only tinymagnitude incident light can produce obvious amplified electricaloutput signal.
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Description

Technical Parameters

The darlington photo transistor (ETT0623BE1) is silicon NPN photodarlington component built with internal darlington twotransistor cascade architecture. This special internal structure brings very high current gain: only tinymagnitude incident light can produce obvious amplified electricaloutput signal. It reduces requirement for external signalamplifying circuitry in optodetection hardware and is widely deployed in miniature slottype optointerrupter and automation presencedetection circuits.

Darlingtonarchitecture photo transistors are prone to falsetrigger if leakagecurrent drifts. Our multipoint qualitycheck during finisheddevice production screens out units with abnormal leakagecurrent, lowering unexpectedtrigger risk for customer endequipment massproduction.

 

Technical Parameters

 

Parameter

Specification

Material

Silicon NPN darlingtonstructure photosensitive chip

Model

ETT0623BE1

Internal Structure

Darlington twotransistor cascade

Key Characteristic

Ultrahigh currentgain under lowintensity incident light

 

Applications

Miniature slotted optointerrupter receiving channel

Highgain darlingtontype phototransistor for compact slotswitch assemblies.

Lowlight industrial automation detection circuits

Highgain photoreceiving element for detection scenarios with relatively weak optical input.

Space constrained optoelectronic sensing modules

Eliminates requirement for additional external signalamplifier components.

 

Customization

 

OEM / ODM services are available. We accept customerdrawingbased or prototypebased manufacturing. Custom sample development time is roughly one week. Evaluation samples before massproduction can be supplied.

 

Packaging & Transportation

 

Every darlington photo transistor is sealed inside antistatic bag and placed inside foam shockproof box. Boxes are loaded to reinforced exportgrade corrugated cartons filled with cushion filler, wrapped with waterproof stretchfilm. Antistatic and fragile warninglabels are printed externally. Supports EXW, FOB, DDP.

 

FAQ

 

Q1: What paymentterms are used for custommassorders of photodarlington components?

Answer: Customproduct massorder condition: 50 % deposit, 50 % balance before shipment.

Q2: What remedy is available for transitdamaged optoelectronic components?

Answer: Submit damagerelated photos, logistics label and damagedproduct details within 48 hours after receipt; verified cases get freeofcharge replacement or corresponding refund.

Q3: Do you perform 100 % inspection before packing darlington photo transistors?

Answer: Yes, all optoelectronic receiving components go through 100 % parameterinspection before packing and shipment.

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