High Gain Photodarlington Sensor
video

High Gain Photodarlington Sensor

The high gain photodarlington sensor (ETT0623BE1) is NPNsiliconbased photodarlingtontype photoreceiving semiconductor device. Its internal darlington twotransistor cascade delivers very high current gain. Even faint incidentlight can trigger significant amplified electricaloutput signal.
Send Inquiry

Description

Technical Parameters

The high gain photodarlington sensor (ETT0623BE1) is NPNsiliconbased photodarlingtontype photoreceiving semiconductor device. Its internal darlington twotransistor cascade delivers very high current gain. Even faint incidentlight can trigger significant amplified electricaloutput signal. This highgain characteristic makes it suitable for compact optodetection hardware where optical input signal strength is limited and adding extra external amplifier hardware is undesirable.

Highgain photodarlington sensors are commonly used in compact slottype optoswitch finishedmodules. Our OEMODM capability supports packagerelated adjustments for customers developing compact custom optosensor assemblies when standard package configuration cannot satisfy mechanicalspace constraints.

 

Technical Parameters

 

Parameter

Specification

Material

Silicon NPN highgain darlingtonstructure photosensitive chip

Model

ETT0623BE1

Internal Architecture

Darlington dualtransistor cascade for high currentgain

Main Advantage

Obvious electricaloutput response triggered by faint incidentlight

 

Applications

Compact slotted optointerrupter modules

Highgain photo darlington receiving sensor for smallsize slottype photo electrics witch units.

Faintlight automation presence detection hardware

Highgain photosensor for detectioncircuits working under weak opticalsignal input.

Custom miniature optoelectronicsensing assemblies

Spacesaving highgain photoreceiving component for customer custombuilt sensormodule PCBA.

 

Customization

 

OEM and ODM services are supported. Manufacturing can be completed based on customer technical drawings or physical prototypes. Custom sample development cycle is about oneweek. Premassproduction evaluation samples are available.

 

Packaging & Transportation

 

Each high gain photodarlington sensor is packed inside antistatic protective bag, stored inside shockresistant foam box. Boxes are assembled into reinforced exportgrade corrugated cartons filled with cushioning materials, wrapped by waterproof stretchfilm. Antistatic and fragile warninglabels are marked externally. EXW, FOB, DDP tradeterms are supported.

 

FAQ

 

Q1: Can highgain photodarlington sensor samples be supplied for customsensormodule development?

Answer: Yes, samples can be provided for customer prototypedevelopment before formal massproduction.

Q2: What warranty applies for customized photodarlingtonsensor products?

Answer: Customized optoelectronicproducts carry a 6month warranty for nonhumancaused qualitydefects.

Q3: Are tiered volumediscounts offered for largevolume photodarlingtonsensor bulkorders?

Answer: Yes, tiered discounts apply for largevolume orders; please reach sales for tailored pricing proposal.

Hot Tags: high gain photodarlington sensor, China high gain photodarlington sensor manufacturers, suppliers, factory, 1653nm Laser Diode, Avalanche Photo Detector, Light Sensitive Transistor, optoelectronic devices, Photodarlington Transistor, Red Light Emitting Diode

Send Inquiry